INVESTIGATION OF ELECTRICAL DOUBLE-LAYERS ON SIO2 SURFACES BY MEANS OF FORCE VS DISTANCE MEASUREMENTS

Citation
G. Huttl et al., INVESTIGATION OF ELECTRICAL DOUBLE-LAYERS ON SIO2 SURFACES BY MEANS OF FORCE VS DISTANCE MEASUREMENTS, Surface and interface analysis, 25(7-8), 1997, pp. 543-547
Citations number
12
Categorie Soggetti
Chemistry Physical
ISSN journal
01422421
Volume
25
Issue
7-8
Year of publication
1997
Pages
543 - 547
Database
ISI
SICI code
0142-2421(1997)25:7-8<543:IOEDOS>2.0.ZU;2-G
Abstract
The formation of electrical charges at solid/liquid interfaces results in a diffuse electrical double layer close to the solid surface. This layer determines, for example, the behaviour of ceramic particles in aqueous media and the effective pore radius of membranes acting in liq uids. The SiO2/SiO2 system is used to demonstrate that linear measurem ents using atomic force microscopy are suited for characterizing doubl e layers at real surfaces. It has to be taken into consideration that the tip itself, which is acting as the probe, is also surrounded by a doable layer and responds to the composition of the electrolyte in a m aterial-specific way. For this reason an oxidized silicon tip was used for the present investigations, so that tip and sample consisted the same material. In this way it is possible to obtain results that can b e evaluated easily and compared with the DLVO theory. (C) 1997 by John Wiley & Sons, Ltd.