Influence of crystal-melt interface shape on self-seeding and single crystalline quality

The growth of Sb-based crystals (InSb, GaSb etc) was undertaken using resis tive heater furnace by vertical directional solidification (VDS) technique. Crystal-melt interface shape during the growth was shown to convert from c oncave to convex along the crystal axis of the ingots. Many antimonide (Sb) crystals of 8 mm to 18 mm diameter were grown by optimized growth paramete rs. The forced convection and absence of conducting support to ampoule show ed improvement in crystal quality of as grown ingots. Crystals showed prefe rred orientation and self-seeding. Results on interface shape and crystalli nity of ingots were found to be in good agreement with the experiments.