Fabrication of NbN single flux quantum (SFQ) circuit and operating properties at 10 K

Authors
Citation
H. Terai et Z. Wang, Fabrication of NbN single flux quantum (SFQ) circuit and operating properties at 10 K, ELEC C JP 2, 84(10), 2001, pp. 34-39
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS
ISSN journal
8756663X → ACNP
Volume
84
Issue
10
Year of publication
2001
Pages
34 - 39
Database
ISI
SICI code
8756-663X(2001)84:10<34:FONSFQ>2.0.ZU;2-I
Abstract
We fabricated a prototype of a single flux quantum (SFQ) logic circuit for operation near 10 K by using NbN, which has a critical temperature around 1 6 K. This circuit is fabricated on a 2-inch silicon (Si) substrate based on the NbN/AlN/NbN tunnel junction having fluctuations in the critical curren t of +/-5% or less from 976 Josephson junctions (JJ). The fabrication of a prototype circuit to generate, propagate, and detect SFQ pulses and the exa mination of its operation confirmed normal operation up to approximately 9. 8 K, which is close to 10 K. In addition, at the operating temperature of 8 .5 K, the operations of elementary cells such as a confluence buffer and a T flip-flop were verified and were successful in the operation of the large st scale circuit, an 8-bit shift register consisting of 105 JJ. (C) 2001 Sc ripta Technica.