High-effective mobilities are demonstrated in AI(2)O(3) based n-channel MOS
FETs with AI gates. The AI(2)O(3) was grown in ultra-high vacuum using a re
active atomic beam deposition system. The mobility with maximum values at a
pproximately 270 cm(2)/Vs, is found to approach that of SiO2 based MOSFETs
at higher fields.