Electrical characterization of Al2O3 n-channel MOSFETs with aluminum gates

Citation
La. Ragnarsson et al., Electrical characterization of Al2O3 n-channel MOSFETs with aluminum gates, IEEE ELEC D, 22(10), 2001, pp. 490-492
Citations number
15
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
07413106 → ACNP
Volume
22
Issue
10
Year of publication
2001
Pages
490 - 492
Database
ISI
SICI code
0741-3106(200110)22:10<490:ECOANM>2.0.ZU;2-Z
Abstract
High-effective mobilities are demonstrated in AI(2)O(3) based n-channel MOS FETs with AI gates. The AI(2)O(3) was grown in ultra-high vacuum using a re active atomic beam deposition system. The mobility with maximum values at a pproximately 270 cm(2)/Vs, is found to approach that of SiO2 based MOSFETs at higher fields.