Enhanced CW performance of the interband cascade laser using improved device fabrication

Authors
Bradshaw, JL Pham, JT Yang, RQ Bruno, JD Wortman, DE
Citation
Jl. Bradshaw et al., Enhanced CW performance of the interband cascade laser using improved device fabrication, IEEE S T QU, 7(2), 2001, pp. 102-105
Citations number
28
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
ISSN journal
1077260X → ACNP
Volume
7
Issue
2
Year of publication
2001
Pages
102 - 105
Database
ISI
SICI code
1077-260X(200103/04)7:2<102:ECPOTI>2.0.ZU;2-U
Abstract
Continuous-wave (CW) operation of a mid-infrared type-II interband cascade (IQ laser has been demonstrated at temperatures up to 142 K by improving de vice processing and fabrication. Also, the IC laser exhibited record-high w all-plug efficiencies (similar to 18 % at 60 K) with considerable CW output powers. An analysis of the thermal resistance partially explains the still low maximum CW operating temperature and suggests further potential for im provement with continued development of fabrication/packaging techniques.