Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers

Authors
Eliseev, PG Li, H Liu, GT Stintz, A Newell, TC Lester, LF Malloy, KJ
Citation
Pg. Eliseev et al., Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers, IEEE S T QU, 7(2), 2001, pp. 135-142
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
ISSN journal
1077260X → ACNP
Volume
7
Issue
2
Year of publication
2001
Pages
135 - 142
Database
ISI
SICI code
1077-260X(200103/04)7:2<135:GEAGIU>2.0.ZU;2-O
Abstract
Emission spectra and modal optical gain are investigated in ultralow-thresh old MBE-grown InAs-InGaAs quantum dot (QD) structures. The record lowest ro om-temperature inversion current is found to be similar to 13 A cm(-2). The rate-equation model is proposed describing the optical gain related to the ground-state (GS) transitions in QDs. The ground-state gain goes to the ma ximum value that corresponds to the total inversion of available levels. Th e gain cross section for the GS emission is estimated as similar to 7 x 10( -15) cm(2).