Over 200-mW operation of single-lateral mode 780-nm laser diodes with window-mirror structure

Authors
Kawazu, Z Tashiro, Y Shima, A Suzuki, D Nishiguchi, H Yagi, T Omura, E
Citation
Z. Kawazu et al., Over 200-mW operation of single-lateral mode 780-nm laser diodes with window-mirror structure, IEEE S T QU, 7(2), 2001, pp. 184-187
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
ISSN journal
1077260X → ACNP
Volume
7
Issue
2
Year of publication
2001
Pages
184 - 187
Database
ISI
SICI code
1077-260X(200103/04)7:2<184:O2OOSM>2.0.ZU;2-E
Abstract
The high-power operation of the lateral mode stabilized 780-nm AlGaAs laser diode (LD) with the window-mirror structure has been achieved. The stable lateral mode operation up to 250 mW is realized. This is the highest power record among the narrow stripe LDs with the wavelength of 780 mn. This LD i s suitable for the next generation high-speed (16-24 x) CD-R/RW drives need ing 200 mW class LDs.