Generic representation of active cavity VCSEL eigenmodes by optimized waist Gauss-Laguerre modes

Citation
Sa. Riyopoulos et al., Generic representation of active cavity VCSEL eigenmodes by optimized waist Gauss-Laguerre modes, IEEE S T QU, 7(2), 2001, pp. 312-327
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
ISSN journal
1077260X → ACNP
Volume
7
Issue
2
Year of publication
2001
Pages
312 - 327
Database
ISI
SICI code
1077-260X(200103/04)7:2<312:GROACV>2.0.ZU;2-#
Abstract
Gain-guided eigenmodes in open VCSEL cavities are constructed by superposit ion of paraxial (i.e., Gauss-Laguerre) (GL) modes, employing the effective cavity hard mirror equivalent for the DBRs. A generic round-trip matrix is obtained analytically for simple gain profiles, including finite mirror dia meter losses, diffraction spreading and aperture scattering effects. Diagon alization yields the full range of stable, unstable, and steady-state compl ex eigenmodes and gain eigenvalues. More importantly, it is demonstrated th at in cases of interest the lower order cavity eigenmodes can be approximat ed by pure GL modes with optimum waist size prescribed through a variationa l principle. A simple analytic relation is thus obtained for the mode waist for a variety of laterally open cavities. The theory is confirmed by compa rison with experimental results. The GL eigenmode properties account for wa velength blue-shifting, increasing density threshold current and increasing differentiation in modal losses with decreasing current aperture. They als o yield the correct aperture placement effects in the cavity standing wave. Diffraction and scattering losses are shown to dominate over mirror losses at small cavity apertures.