Design and characterization of 1.3-mu m AlGaInAs-InP multiple-quantum-welllasers

Authors
Selmic, SR Chou, TM Sih, JP Kirk, JB Mantie, A Butler, JK Bour, D Evans, GA
Citation
Sr. Selmic et al., Design and characterization of 1.3-mu m AlGaInAs-InP multiple-quantum-welllasers, IEEE S T QU, 7(2), 2001, pp. 340-349
Citations number
29
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
ISSN journal
1077260X → ACNP
Volume
7
Issue
2
Year of publication
2001
Pages
340 - 349
Database
ISI
SICI code
1077-260X(200103/04)7:2<340:DACO1M>2.0.ZU;2-H
Abstract
A comprehensive design method for long wavelength strained quantum-well las ers is applied to design uncooled multiple-quantum-well AlGaInAs-InP 1.3-mu m lasers for communication systems. The method includes multiband effective mass theory and electromagnetic waveguide theory. The resulting AlGaInAs-I nP laser has a threshold current of 12.5 mA at 25 degreesC, with a slope ef ficiency of 0.43 W/A, at 77 K orgreater characteristic temperature, a 38 de grees perpendicular far-field beam divergence, and will operate at temperat ures in excess of 100 degreesC.