A novel approach for improved green-emitting II-VI lasers

New concepts to improve the performance of green-emitting laser diodes, bas ed on the ZnSe system, are presented. The benefits of implantation-induced disordering (IID) and a novel alloyed contact structure are discussed. Usin g IID, index-guided lasers with low thresholds are fabricated. The introduc tion of Li3N-containing contacts leads to an acceptor indiffusion resulting in an increased p-type doping level and thereby extremely reduced turn-on voltages, threshold current densities, increased wall-plug efficiencies, an d extended continuous-wave lifetimes.