A novel approach for improved green-emitting II-VI lasers

Authors
Strassburg, M Schulz, O Pohl, UW Bimberg, D Itoh, S Nakano, K Ishibashi, A Klude, M Hommel, D
Citation
M. Strassburg et al., A novel approach for improved green-emitting II-VI lasers, IEEE S T QU, 7(2), 2001, pp. 371-375
Citations number
28
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
ISSN journal
1077260X → ACNP
Volume
7
Issue
2
Year of publication
2001
Pages
371 - 375
Database
ISI
SICI code
1077-260X(200103/04)7:2<371:ANAFIG>2.0.ZU;2-1
Abstract
New concepts to improve the performance of green-emitting laser diodes, bas ed on the ZnSe system, are presented. The benefits of implantation-induced disordering (IID) and a novel alloyed contact structure are discussed. Usin g IID, index-guided lasers with low thresholds are fabricated. The introduc tion of Li3N-containing contacts leads to an acceptor indiffusion resulting in an increased p-type doping level and thereby extremely reduced turn-on voltages, threshold current densities, increased wall-plug efficiencies, an d extended continuous-wave lifetimes.