Low-threshold and high-temperature operation of InGaAlP-based proton-implanted red VCSELs

Authors
Takaoka, K Ishikawa, M Hatakoshi, G
Citation
K. Takaoka et al., Low-threshold and high-temperature operation of InGaAlP-based proton-implanted red VCSELs, IEEE S T QU, 7(2), 2001, pp. 381-385
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
ISSN journal
1077260X → ACNP
Volume
7
Issue
2
Year of publication
2001
Pages
381 - 385
Database
ISI
SICI code
1077-260X(200103/04)7:2<381:LAHOOI>2.0.ZU;2-H
Abstract
InGaAlP-based red vertical-cavity surface-emitting lasers (VCSELs) have bee n successfully fabricated using the proton-implanted planar structure suita ble for mass production. A low threshold current of 2.5 mA with 666-nm lasi ng wavelength at room temperature and a high maximum continuous wave (CW) l asing temperature of 60 degreesC have been achieved. In addition, it was fo und that the maximum CW lasing temperature decreased linearly with the incr ease in the device diameter. This was because the thermal resistance of the device was approximately inversely proportional to the device diameter.