A 2-D analytical threshold voltage model for fully-depleted SOI MOSFETs with halos or pockets

The exact solution of the two-dimensional (2-D) Poisson's equation has been analytically derived for fully-depleted (FD) SOI MOSFETs with Halos or poc kets. The approach uses a three-zone Green s function solution technique. E xplicit equations i 1 for the 2-D electrical potential as well as for both front- and back-side threshold voltages have been derived. The accuracy of the equations has been verified by a 2-D numerical device simulator. From t he presented results, it can be concluded that B B the analytically derived model for the electrical potential and threshold voltages are in good agre ement with 2-D numerical simulation data.