Lateral profiling of interface traps and oxide charge in MOSFET devices: Charge pumping versus DCIV

An improved oxide-charge and interface-trap lateral profiling charge pumpin g technique (iLPCP) is described. Erase-induced oxide charge and interface traps are investigated in Flash EPROM devices. It is shown that the improve d technique allows the extraction of profiles in cases where the previous m ethod does not yield satisfactory results. A comparative study of iLPCP and of an existing direct current (DCIV) technique for lateral profiling of in terface traps is conducted: both erase- and program-induced interface traps are investigated in Flash EPROM devices. The results indicate that 1) iLPCP probes a much bigger portion of the gate region; 2) iLPCP probes a wider energy range; 3) DCIV is more sensitive deep in the channel and thus complements iLPCP.