F. Boxberg et J. Tulkki, Modeling of oxidation-induced strain and its effect on the electronic properties of Si waveguides, IEEE DEVICE, 48(10), 2001, pp. 2405-2409
We have studied the influence of oxidation-induced strain on the electronic
structure in Si quantum wires and quantum point contacts. The strain calcu
lations were done using a semiempirical approximation which enabled three-d
imensional (3-D) strain simulations of the device structures. The strain-in
duced deformation of the conduction band gives rise to a 3-D potential mini
mum having a depth of similar to 35 meV. In addition to the formation of lo
calized electron states in the channel, our calculations predict crossing o
f transverse energy levels corresponding to different conduction band minim
a. Our calculations also predict strain-induced channeling of electrons to
the edges of the structure.