Impact of a high electric field on the extraction of the generation lifetime from the reverse generation current component of shallow n(+)-p-well diodes

A procedure is proposed to extract the thermal generation lifetime (tau (g) ) profile in the depletion region of shallow n(+)-p-well junctions surround ed by shallow trench isolation from the generation current density. This is achieved by taking account of the electric field enhancement factor. As wi ll be shown, a more realistic tau (g) profile is obtained that better refle cts the trap density profile, corresponding with the deep boron ion implant ation-related extended defects.