Physical modeling of the reverse-short-channel effect for circuit simulation

The proposed threshold-voltage (Vth) model for circuit simulation includes reverse-short-channel effect (RSCE) and short-channel effect (SCE) based on their respective physical origins. Linear vertical-impurity profile approx imation for simplified RSCE-modeling already enables 8 mV average V-th-accu racy (max < 45 mV) under all bias conditions for source, drain, and bulk fo r L-gate down to 0.15 mum. The complete V-th-model needs only ten constant L-gate-independent parameters.