Analysis of random dopant-induced effects through numerical solution of randomly perturbed nonlinear Poisson equation

A new approach to the analysis of random dopant-induced effects in semicond uctor devices is proposed. This approach Is based on numerical solution of randomly perturbed nonlinear Poisson equation by using a "small signal anal ysis" (perturbation) technique. This technique is computationally much more efficient than the existing "statistical" techniques and it yields the inf ormation that can be directly used for the design of dopant fluctuation-res istant structures of semiconductor devices.