InGaP-channel field transistors with high breakdown voltage

We have developed InGaP-channel field effect transistors (FETs) with high b reakdown voltages that can be fabricated by using conventional GaAs FET fab rication processes. The buffer and barrier layers were also optimized for t he realization of high-voltage operation. The InGaP-channel FET ha's an ext remely high on-state drain-to-source breakdown voltage of over 40 V, and a gate-to-drain breakdown voltage of 55 V. This enabled high-voltage large-si gnal operation at 40 V. The third-order intermodulation distortion of the I nGaP channel FETs was 10-20 dB lower than that of an equivalent GaAs-channe l FET, due to the high operating voltage.