The recovery process of RIE-damage in InGaAs/AlGaAs PHEMT using recombination enhanced defect reaction

The reduction of the drain current for InGaAs/AlGaAs pseudomorphic high ele ctron mobility transistors (PHEMTs) has been observed due to the RIE-damage induced under the gate region. However, it has been found that the drain c urrent can be recovered after the gate-drain reverse current stress even at room temperature. The recovery rate of the drain current strongly depends on the gate-drain reverse current density. The activation energy of the rec overy rate has been confirmed to decrease from 0.531 eV to 0.119 eV under t he gate-drain reverse current stress. This phenomenon can be understood as a recombination enhanced defect reaction of holes generated by the avalanch e breakdown. The non-radiative recombination of holes at the defect level i s believed to enhance the recovery of the RIE-damage.