Emitter interface in InP-based HBTs with InAlAs/InP composite emitters

Authors
McKinnon, WR Driad, R Storey, C Renaud, A McAlister, SP Garanzotis, T Springthorpe, AJ
Citation
Wr. Mckinnon et al., Emitter interface in InP-based HBTs with InAlAs/InP composite emitters, IEICE TR EL, E84C(10), 2001, pp. 1373-1378
Citations number
16
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEICE TRANSACTIONS ON ELECTRONICS
ISSN journal
09168524 → ACNP
Volume
E84C
Issue
10
Year of publication
2001
Pages
1373 - 1378
Database
ISI
SICI code
0916-8524(200110)E84C:10<1373:EIIIHW>2.0.ZU;2-L
Abstract
The current-voltage characteristics of InP-based HBTs with InAlAs-InP compo site emitters have been measured as a function of the thickness of the InP layer in the emitter. As the thickness varies, characteristics such as the gain and the ideality factor vary qualitatively as expected from the change s in position of the InAlAs barrier in the emitter. Quantitatively, however , the variations indicate that the interfaces vary systematically with InP thickness, becoming more abrupt for emitters with thicker InP layers.