SiGe hetero-FETs potential for micropower applications

Silicon Germanium Heterostructure field effect transistors have been propos ed as a promising extension to the CMOS technologies affording enhanced per formance at relaxed geometries. Particularly promising is the potential of SiGe Heterostructure MOS and Heterostrucure FET at the low power operating regime. We discuss circuit design techniques applicable in the micropower r egime which can be applied to SiGe HMOS technologies. We then review recent results in HMOS both from the material and the applications point of view. We conclude by reporting simulation results indicating the potential of Si Ge HMOS in radiofrequency micropower applications.