Advanced SOI MOSFET's with strained-Si/SiGe heterostructures

We have developed advanced SOI n- and p-MOSFETs with strained-Si channel on insulator (strained-SOI) structure fabricated by SIMOX (separation-by-impl anted-oxygen) technology. The characteristics of this strained-SOI substrat e and electrical properties of strained-SOI MOSFET's have been experimental ly studied. Using strained-Si/relaxed-SiGe epitaxy technology and usual SIM OX process, we have successfully formed the layered structure of fully-stra ined-Si (20 nm)/fully-relaxed-SiGe film (290 nm) on uniform buried oxide la yer (85 nm) inside SiGe layer. Good drain current characteristics have been obtained in strained-SOI MOSFET's. It is found that both electron and hole mobility is enhanced in strained-SOI MOSFET's, compared to the universal m obility in an inversion layer and the mobility of control SOI MOSFET's. The se mobility enhancement factors are almost the same as the theoretical resu lts.