T. Otsuji et al., Numerical analysis for resonance properties of plasma-wave field-effect transistors and their terahertz applications to smart photonic network systems, IEICE TR EL, E84C(10), 2001, pp. 1470-1476
This paper describes the numerical analysis for terahertz electromagnetic-w
ave oscillation/detection properties of plasma-wave field-effect transistor
s (PW-FET's) and their applications to future smart photonic network system
s. The PW-FET is a new type of the electron device that utilizes the plasma
resonance effect of highly dense two-dimensional conduction electrons in t
he FET channel. By numerically solving the hydrodynamic equations for PW-FE
T's, the plasma resonance characteristics under terahertz electromagnetic-w
ave absorption are analyzed for three types of FET's; Si MOSFET's, GaAs MES
FET's. and InP-based HEMT's. The results indicate that the InP-based sub-10
0-nm gate-length HEMT's exhibit the most promising oscillation/detection ch
aracteristics in the terahertz range with very wide frequency tunability. B
y introducing the PNV-FET's as injection-locked terahertz-frequency-tunable
oscillators and terahertz mixers, a new idea of coherent heterodyne detect
ion utilizing terahertz IF (intermediate-frequency) bands is proposed for t
he future smart photonic network systems that enable real-time adaptive wav
elength routing for add-drop multiplexing. The plasma resonance of PW-FET's
by means of different frequency generation based on direct photomixing is
also proposed as an alternative approach to injection-locked terahertz osci
llation. To realize it. virtual carrier excitations by the polariton having
photon energy lower than the bandgap of the channel is a possible mechanis
m.