Stoichiometry changes by selective vacancy formation on (110) surfaces of III-V semiconductors: Influence of electronic effects (vol 114, pg 445, 2001)

Authors
Semmler, U Simon, M Ebert, P Urban, K
Citation
U. Semmler et al., Stoichiometry changes by selective vacancy formation on (110) surfaces of III-V semiconductors: Influence of electronic effects (vol 114, pg 445, 2001), J CHEM PHYS, 115(15), 2001, pp. 7330-7330
Citations number
1
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CHEMICAL PHYSICS
ISSN journal
00219606 → ACNP
Volume
115
Issue
15
Year of publication
2001
Pages
7330 - 7330
Database
ISI
SICI code
0021-9606(20011015)115:15<7330:SCBSVF>2.0.ZU;2-Z