Interpreting the oxygen partial pressure around a molten silicon drop in terms of its surface tension

Authors
Azami, T Hibiya, T
Citation
T. Azami et T. Hibiya, Interpreting the oxygen partial pressure around a molten silicon drop in terms of its surface tension, J CRYST GR, 233(3), 2001, pp. 417-424
Citations number
12
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
233
Issue
3
Year of publication
2001
Pages
417 - 424
Database
ISI
SICI code
0022-0248(200112)233:3<417:ITOPPA>2.0.ZU;2-J
Abstract
The oxygen partial pressure around a molten silicon drop was determined fro m the inlet (P-O2(inlet))and outlet (P-O2(exit)) pressures of a furnace und er precisely controlled gas flow rate. It was found that P-O2(exit) is much lower than P-O2(inlet) and that measured P-O2(exit) depends on gas flow ra te, but P-O2(inlet) does not. This dependence can be explained by an oxygen transfermodel using the Peclet number. (C) 2001 Elsevier Science B.V. All rights reserved.