Preparation and properties of lanthanum strontium cobalt films on Si(100) by metallorganic chemical liquid deposition

Lanthanum strontium cobalt La0.5Sr0.5CoO3 (LSCO) films have been grown on S i(1 0 0) substrate by metallorganic chemical liquid deposition (MOCLD) tech nique using lanthanum acetate, strontium acetate and cobalt acetate as the starting materials. The technique simplified the preparation of LSCO thin f ilms by chemical solution routes. The films were crystallized by rapid ther mal annealing (RTA) process. The films annealed between 600 degreesC and 75 0 degreesC are entirely in the perovskite phase and show good conductivity. The lowest resistivity (950 mu Omega cm) thin films were obtained by annea ling at 750 degreesC. The size effect of sheet resistance of the LSCO films has been discussed. PbZr0.5Ti0.5O3 (PZT) films deposited onto LSCO films d isplayed a good P-E hysteresis characteristic. (C) 2001 Elsevier Science B. V. All rights reserved.