Mass density of glassy Pd80Si20 during low-temperature light ion irradiation

Citation
G. Schumacher et al., Mass density of glassy Pd80Si20 during low-temperature light ion irradiation, J MATER RES, 16(10), 2001, pp. 2788-2792
Citations number
30
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS RESEARCH
ISSN journal
08842914 → ACNP
Volume
16
Issue
10
Year of publication
2001
Pages
2788 - 2792
Database
ISI
SICI code
0884-2914(200110)16:10<2788:MDOGPD>2.0.ZU;2-Z
Abstract
Changes in mass density of amorphous Pd80Si20 were monitored in situ during irradiation with He2+ and H+ ions at temperatures below 100 K and during s ubsequent thermal treatment. The mass density decreased with increasing ion fluence and exponentially approached a saturation value of -1.2%, correspo nding to a recombination volume of 190 atomic volumes, The initial swelling rate was 2.3 atomic volumes/displaced atom. The mass density of the irradi ated material increased during subsequent thermal treatment, and the irradi ation-induced decrease of the mass density recovered completely at room tem perature.