Structural imperfections associated with supersaturated vacancies in an HPHT-grown diamond single crystal

Citation
Lw. Yin et al., Structural imperfections associated with supersaturated vacancies in an HPHT-grown diamond single crystal, J MAT SCI T, 17(5), 2001, pp. 553-555
Citations number
13
Categorie Soggetti
Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSN journal
10050302 → ACNP
Volume
17
Issue
5
Year of publication
2001
Pages
553 - 555
Database
ISI
SICI code
1005-0302(200109)17:5<553:SIAWSV>2.0.ZU;2-Z
Abstract
A diamond single crystal, which was synthesized at a high temperature of 15 70 K and a high pressure of 5.5 GPa in a Fe-Ni-C system, was directly and s ystematically examined by transmission electron microscopy (TEM). It is pro posed that there exists a variety of imperfections such as dislocation loop s, stacking faults, twins and stacking-fault tetrahedral in the diamond, wh ich may be derived from the supersaturated vacancies generated during rapid cooling from high temperature. The formation process of the imperfections is discussed briefly.