Characterization of CuIn1-xGaxS2 films synthesized by graphite-box annealing of stacked elemental layers

Authors
Bandyopadhyaya, S Roy, S Guha, P Chaudhuri, S Pal, AK
Citation
S. Bandyopadhyaya et al., Characterization of CuIn1-xGaxS2 films synthesized by graphite-box annealing of stacked elemental layers, J PHYS D, 34(17), 2001, pp. 2581-2588
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN journal
00223727 → ACNP
Volume
34
Issue
17
Year of publication
2001
Pages
2581 - 2588
Database
ISI
SICI code
0022-3727(20010907)34:17<2581:COCFSB>2.0.ZU;2-X
Abstract
CuIn1-xGaxS2 films were synthesized by graphite-box annealing of In/Ga/Cu s tacked elemental layers (SEL) in the presence of sulphur vapour. The effect s of the ambient gas, annealing temperature and duration of annealing on th e microstructure of the films synthesized during annealing were studied. Th e films were characterized by measuring the microstructure and the optical and electrical properties. The effect of grain boundary scattering on the e lectron transport process was also studied.