Dynamic mixing deposition of niobium nitride films by cathodic are plasma in ambient nitrogen

Two cathodic are plasma deposition processes have been used to deposit niob ium nitride films in ambient nitrogen: (a) cathodic are plasma deposition w ithout dynamic mixing and (b) cathodic arc plasma deposition with, energeti c ion dynamic mixing. Smooth and continuous niobium nitride films were fabr icated at low temperature in process (b) but at higher temperature (500 deg reesC) in process (a). The effects of the substrate temperature on the film composition and preferred orientation were investigated. In process (a), f ilms deposited at room temperature and 300 degreesC exhibited a preferred o rientation of (220) whereas those deposited at 500 degreesC showed a prefer red orientation of (200). The nitrogen content in the film synthesized in p rocess (b) is higher than that in the films deposited in process (a). Our r esults show that with energetic ion dynamic mixing, niobium nitride films w ith excellent properties can be fabricated at low substrate temperature usi ng a niobium metal arc plasma source in a nitrogen plasma immersion configu ration. (C) 2001 American Vacuum Society.