Deposited well-crystallized cubic boron nitride films by pulsed plasma enhanced chemical vapor deposition at room temperature

The crystallized cubic boron nitride (c-BN) films have been grown on silico n (100) wafer substrate successfully at room temperature by using a pulsed plasma enhanced chemical vapor deposition technique. Infrared absorption sp ectra and x-ray diffraction indicate that deposited boron nitride films mai nly consist of c-BN phase. The scanning electron microscopy images exhibit regular grain shapes. The mean grain size is about 500 Dm. The ratio of c-B N phase to h-BN phase in the deposited thin films mainly depends on the dis charging voltages that producing the pulsed plasma. (C) 2001 American Vacuu m Society.