Molecular dynamics simulation of silicon and silicon dioxide etching by energetic halogen beams

Molecular. dynamics simulations of silicon (Si) and silicon dioxide (SiO2) etching by energetic halogen (fluorine or chlorine) atoms in the energy ran ge of 50-150 eV are performed using new sets of interatomic potentials for Si-O-F and Si-O-Cl systems. Etch rates and selectivities obtained from nume rical simulations are compared with available experimental data. Etching me chanisms in the atomic scale, especially the difference between chlorine an d fluorine direct ion etching characteristics, are discussed on the basis o f the simulation results. (C) 2001 American Vacuum Society.