Angular dependence of the surface excitation probability for medium energyelectrons backscattered from Al and Si surfaces

Citation
Wsm. Werner et al., Angular dependence of the surface excitation probability for medium energyelectrons backscattered from Al and Si surfaces, J VAC SCI A, 19(5), 2001, pp. 2388-2393
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
19
Issue
5
Year of publication
2001
Pages
2388 - 2393
Database
ISI
SICI code
0734-2101(200109/10)19:5<2388:ADOTSE>2.0.ZU;2-4
Abstract
Reflection electron energy loss, spectra have been measured for medium ener gy electrons backscattered from Al and Si surfaces. Angular distributions w ere obtained for emission angles between 15 degrees and 90 degrees with res pect to the surface normal as well as for incidence angles in the same rang e. The surface excitation parameter (SEP), i.e., the average number of surf ace excitations an electron experiences when it crosses a surface once, was extracted from each spectrum by fitting the raw data to theory and determi ning the ratio of the surface loss peak to the elastic peak intensity. No d ifference in the SEP for incoming and outgoing electrons could be detected in the data. The SEP was found to depend linearly on the, time an electron spends in the vicinity of the surface. Both the energy and angular dependen ce of the SEP can be accurately described by free-electron theory when the electron momentum is rescaled by a material-dependent parameter. The value of the scaling parameter is given for Al and Si so that the SEP in these ma terials can accurately be predicted for medium energies and arbitrary exper imental configurations. (C) 2001 American Vacuum Society.