Characterization of sputtered indium tin oxide layers as transparent contact material

Citation
G. Franz et al., Characterization of sputtered indium tin oxide layers as transparent contact material, J VAC SCI A, 19(5), 2001, pp. 2514-2521
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
19
Issue
5
Year of publication
2001
Pages
2514 - 2521
Database
ISI
SICI code
0734-2101(200109/10)19:5<2514:COSITO>2.0.ZU;2-R
Abstract
The electrical, optical, and various mechanical properties of rf sputtered indium tin oxide layers were investigated in terms of electrical resistivit y (four-probe measurement and Hall), optical transparency, scanning transmi ssion electron spectroscopy and x-ray spectroscopy. Whereas the specific co nductivity is. at the lower limit reported in the literature (2 X 10(-4) Om ega cm), and the optical transparency is as high as 90% in the wavelength r ange between 550 and 800 nm, the grain size is between 10 and 25 nm. The st ress is tensile and in the range of 7 kbar after deposition, to drop to 3 k bar after anneal. (C) 2001 American Vacuum Society.