Characterization of inductively coupled plasma etched surface of GaN usingCl-2/BCl3 chemistry

We have investigated plasma-induced damage of the inductively coupled plasm a (ICP) etched surface of n-type GaN using Cl-2/BCl3 chemistry. The surface morphology of the etched GaN under different plasma conditions is analyzed by atomic force microscopy. X-ray photoelectron spectroscopy is used to co rrelate the chemical changes induced by plasma etching of the GaN surface. We have carried out photoluminescence measurements of etched GaN surfaces s ubjected to varying ICP conditions. The intensity of the. band-edge and yel low luminescence transitions was used to evaluate the damage introduced int o the semiconductor during dry etching. (C) 2001 American Vacuum Society.