Transmission electron microscopy of threading dislocations in ZnO films grown on sapphire

Authors
Lim, SH Washburn, J Liliental-Weber, Z Shindo, D
Citation
Sh. Lim et al., Transmission electron microscopy of threading dislocations in ZnO films grown on sapphire, J VAC SCI A, 19(5), 2001, pp. 2601-2603
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
19
Issue
5
Year of publication
2001
Pages
2601 - 2603
Database
ISI
SICI code
0734-2101(200109/10)19:5<2601:TEMOTD>2.0.ZU;2-T
Abstract
Threading dislocations in wurtzite ZnO films grown on the (11 (2) over bar0 ) a plane of sapphire were studied by transmission electron microscopy. A m ajority of the threading dislocations were found to be of screw or mixed ch aracter. Dislocation half loops, elongated along the c axis, were observed. It is likely that they are formed when two screw dislocations of opposite sign attract each other during growth and combine. (C) 2001 American Vacuum Society.