Novel method for preparation of disulfides on silicon

Citation
G. Ledung et al., Novel method for preparation of disulfides on silicon, LANGMUIR, 17(20), 2001, pp. 6056-6058
Citations number
6
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
LANGMUIR
ISSN journal
07437463 → ACNP
Volume
17
Issue
20
Year of publication
2001
Pages
6056 - 6058
Database
ISI
SICI code
0743-7463(20011002)17:20<6056:NMFPOD>2.0.ZU;2-B
Abstract
This work describes an efficient novel method to incorporate reactive disul fide bonds onto a silica surface under mild reaction conditions. The reacti ve thiol groups introduced onto the silicon surface in the first reaction s tep will be oxidized but easily converted into highly reactive thiopyridyl groups, which can therefore easily be utilized for further organic synthesi s involving thiol-containing molecules. This is done in a way that yields a pproximately a monolayer of reactant on the surface, thereby not adding to the roughness of the surface, of special importance, for instance, for sing le molecule interaction studies.