Citation
M. Nakabayashi et al., Reliability of polycrystalline silicon thin film resistors, MICROEL REL, 41(9-10), 2001, pp. 1341-1346
Citations number
12
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714
→ ACNP
Volume
41
Issue
9-10
Year of publication
2001
Pages
1341 - 1346
Database
ISI
SICI code
0026-2714(200109/10)41:9-10<1341:ROPSTF>2.0.ZU;2-D
Abstract
This paper reports on the long-term stability of the resistance of Poly-Si
thin film resistors, implanted with boron (B) or phosphorous (P) atoms, sub
jected to a thermal and electrical stress. The observed degradation in resi
stance after thermal and electrical stress pointed out that the resistance
of Poly-Si films implanted with boron atoms increases for tensile stress, w
hile no changes were observed for Poly-Si films implanted with phosphorus.
(C) 2001 Elsevier Science Ltd. All rights reserved.