Low frequency noise and reliability properties of 0.12 mu m CMOS devices with Ta2O5 as gate dielectrics

The continuous scaling down of CMOS devices requires gate oxide thinning be low 2nm, giving rise to enhanced gate leakage. In order to attenuate this g ate current, replacement gate dielectrics have to be employed. Recently, CM OS technologies with Ta2O5 as gate dielectrics have been proposed as possib le alternatives. In this work, we investigate the electrical properties of 0.12 mum Ta2O5 CMOS devices in terms of static characteristics, interface q uality through low frequency noise, hot carrier degradation and dielectric reliability. (C) 2001 Elsevier Science Ltd. All rights reserved.