ESD-induced circuit performance degradation in RFICs

Citation
K. Gong et al., ESD-induced circuit performance degradation in RFICs, MICROEL REL, 41(9-10), 2001, pp. 1379-1383
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
41
Issue
9-10
Year of publication
2001
Pages
1379 - 1383
Database
ISI
SICI code
0026-2714(200109/10)41:9-10<1379:ECPDIR>2.0.ZU;2-S
Abstract
ESD structures have inevitable parasitic impacts on circuit performance. Th is paper reports results of an investigation into ESD-induced circuit perfo rmance degradation in RFICs including clock corruption, reduced slew rate, narrowed bandwidth, and noise generation. Performance degradation of simila r to 80%, similar to 30% & similar to5% were observed in clock, Op Amp and LNA circuits studied, which were recovered substantially by using novel com pact ESD structures that are critical to reducing ESD-to-circuit influences while maintaining adequate ESD performance. (C) 2001 Elsevier Science Ltd. All rights reserved.