Non contact surface potential measurements for charging reduction during manufacturing of metal-insulator-metal capacitors

Citation
J. Ackaert et al., Non contact surface potential measurements for charging reduction during manufacturing of metal-insulator-metal capacitors, MICROEL REL, 41(9-10), 2001, pp. 1403-1407
Citations number
3
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
41
Issue
9-10
Year of publication
2001
Pages
1403 - 1407
Database
ISI
SICI code
0026-2714(200109/10)41:9-10<1403:NCSPMF>2.0.ZU;2-1
Abstract
In this paper, charging induced damage (CID) to metal-insulator-metal-capac itor (MIMC), is reported. The damage is caused by the build up of charges o n an oxide surface during a water rinsing step. The excessive charging over a large capacitor area results in a discharge over the inter metal dielect ric layer (IMD) towards a grounded structure, This CID leads to direct seve re yield loss. The charging has been detected, measured and reduced with th e help of a non contact surface potential measurement. In this way further yield losses have been prevented. A model for the relation between the surf ace charging potential and the voltage difference between the capacitor and the grounded structure is presented. (C) 2001 Elsevier Science Ltd. All ri ghts reserved.