Simulation and experimental comparison of GGNMOS and LVTSCR protection cells under ElectroStatic Discharges

Authors
Guilhaume, A Galy, P Chante, JP Foucher, B Blanc, F
Citation
A. Guilhaume et al., Simulation and experimental comparison of GGNMOS and LVTSCR protection cells under ElectroStatic Discharges, MICROEL REL, 41(9-10), 2001, pp. 1433-1437
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
41
Issue
9-10
Year of publication
2001
Pages
1433 - 1437
Database
ISI
SICI code
0026-2714(200109/10)41:9-10<1433:SAECOG>2.0.ZU;2-4
Abstract
To assess the capabilities of the device simulation tool in the field of El ectroStatic Discharges (ESD), two protection structures were studied: a Gro unded Gate NMOS transistor (GGNMOS) and a Low Voltage Threshold Silicon Con trolled Rectifier (LVTSCR). Both compounds were tested with the Transmissio n Line Pulse test method and simulated with the software Dessis-ISE. Hence, checking the behaviour of each device in terms of ESD has been possible. ( C) 2001 Elsevier Science Ltd. All rights reserved.