High-resolution in-situ study of gold electromigration: test time reduction

Citation
K. Croes et al., High-resolution in-situ study of gold electromigration: test time reduction, MICROEL REL, 41(9-10), 2001, pp. 1439-1442
Citations number
3
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
41
Issue
9-10
Year of publication
2001
Pages
1439 - 1442
Database
ISI
SICI code
0026-2714(200109/10)41:9-10<1439:HISOGE>2.0.ZU;2-N
Abstract
The electromigration behaviour of a large set of gold interconnections is s tudied using the high-resolution in-situ measurement technique. First, init ial resistance drifts (DeltaR/R-0=0.1%) have been recorded on only one samp le for each stress level in a broad matrix of stress levels. Using these me asurements, the activation energy and the current exponent have been determ ined accurately. Second, failure times (DeltaR/R-0=10%) and values for sigm a have been obtained by applying higher stress levels on a population of te st lines. A combination of this two-step procedure with our high-resolution equipment yields a full characterisation of gold electromigration and a li fetime prediction with a significant higher accuracy and far less measureme nt time than using low resolution test systems. (C) 2001 Elsevier Science L td. All rights reserved.