A reliable course of scanning capacitance microscopy analysis applied for 2D-dopant profilings of power MOSFET devices

Authors
Leicht, M Fritzer, G Basnar, B Golka, S Smoliner, J
Citation
M. Leicht et al., A reliable course of scanning capacitance microscopy analysis applied for 2D-dopant profilings of power MOSFET devices, MICROEL REL, 41(9-10), 2001, pp. 1535-1537
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
41
Issue
9-10
Year of publication
2001
Pages
1535 - 1537
Database
ISI
SICI code
0026-2714(200109/10)41:9-10<1535:ARCOSC>2.0.ZU;2-G
Abstract
We apply a particular course of SCM analysis for the 2D-dopant profiling of Power MOSFETS revealing reduced breakdown voltages. The reliability of thi s analysis is ensured by comparisons of failed devices to reliable referenc es. Our analysis strongly suggests that the reduced breakdown voltages resu lt from deviations of the depths of particular p-wells (2.52 +/- 0.07 mum) from the regular value (2.29 +/- 0.07 mum) as measured at references. (C) 2 001 Elsevier Science Ltd. All rights reserved.