Backside localization of current leakage faults using thermal laser stimulation

Thermal laser stimulation (OBIRCH, TIVA) is shown to be a valuable method f or localizing current leakage from the front or backside of the silicon die . Its usefulness in a failure analysis laboratory is illustrated through se veral different case studies on silicon IC devices that presented an abnorm al leakage current. The thermal laser stimulation method has been able to d etect current leakage defect in the IC's metallic elements as well as in it s polysilicon, oxide and silicon layers. (C) 2001 Elsevier Science Ltd. All rights reserved.