Operation of power semiconductors under transient thermal conditions: thermal fatigue reliability and mechanical aspects

Authors
Forster, S Lequeu, T Jerisian, R
Citation
S. Forster et al., Operation of power semiconductors under transient thermal conditions: thermal fatigue reliability and mechanical aspects, MICROEL REL, 41(9-10), 2001, pp. 1677-1682
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
41
Issue
9-10
Year of publication
2001
Pages
1677 - 1682
Database
ISI
SICI code
0026-2714(200109/10)41:9-10<1677:OOPSUT>2.0.ZU;2-T
Abstract
The authors explain the degradation mechanism of a TRIAC submitted to the a pplication of strong di/dt during the commutation at turn-on. The analysis is based on the evaluation of the thermo-mechanical forces concerned in the Initially Turned on Area of the TRIAC in quadrant Q2. A mathematical expre ssion is established giving the number of commutations cycles before failur e that the component can withstand. This expression is made profitable to e valuate the reliability of the TRIAC. (C) 2001 Elsevier Science Ltd. All ri .-hts reserved.