ESD protection structures for BCD5 smart power technologies

In this work we present new ESD protections structures, compatible with the in BCD5 smart power technology, based on an optimization of the "Big-Clamp " approach. By adopting dedicated Vdd and Vss ESD rails and by replacing th e standard diodes with two BJTs, adequately connected to the Vdd and Vss ES D rails, we have obtained ESD robustness in excess of 8KV HBM for 5V supply voltage structures. By adopting a suitable "Darlington"-LDMOS we have obta ined 7 kV and 4 kV HBM threshold for ESD protection structures suitable for 20 V and 40 V supply voltages respectively. (C) 2001 Elsevier Science Ltd. All rights reserved.