After a brief overview of the CMS EMU electronics system, results on radiat
ion induced single event effects, total ionization dose and displacement ef
fects will be reported. These results are obtained by irradiating the compo
nents on electronics boards with 63 MeV protons and I MeV neutrons. During
the proton irradiation, the electronics board was fully under power, all co
mponents on the board were active and the data were read out in the same wa
y as designed for CMS. No deterioration of analog performance for each of t
he three CMOS ASICs on the tested board was observed, up to a dose of 10 kr
ad. Each of the tested FPGAs survived beyond the dose of 30 krad. No single
event latch-up was detected for the CMOS ASICs up to a proton fluence of 2
x 10(12) cm(-2). Single Event Upsets (SEU) in FPGAs were detected and thei
r cross-sections measured. SEU mitigation with triple module redundancy and
voting was implemented and tested. (C) 2001 Elsevier Science B.V. All righ
ts reserved.