Lifetimes of hydrogen and deuterium related vibrational modes in silicon -art. no. 145501

Authors
Budde, M Lupke, G Chen, E Zhang, X Tolk, NH Feldman, LC Tarhan, E Ramdas, AK Stavola, M
Citation
M. Budde et al., Lifetimes of hydrogen and deuterium related vibrational modes in silicon -art. no. 145501, PHYS REV L, 8714(14), 2001, pp. 5501
Citations number
20
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
8714
Issue
14
Year of publication
2001
Database
ISI
SICI code
0031-9007(20011001)8714:14<5501:LOHADR>2.0.ZU;2-4
Abstract
Lifetimes of hydrogen and deuterium related stretch modes in Si are measure d by high-resolution infrared absorption spectroscopy and transient bleachi ng spectroscopy. The lifetimes are found to be extremely dependent on the d efect structure, ranging from 2 to 295 ps. Against conventional wisdom, we find that lifetimes of Si-D modes typically are longer than for the corresp onding Si-H modes. The potential implications of the results on the physics of electronic device degradation are discussed.