The ionic conductivity of isometric pyrochlore, ideally A(2)B(2)O(7), is ex
tremely sensitive to disordering of A- and B-site cations and oxygen anion
vacancies. We report the first use of ion beam irradiation-induced disorder
ing in Gd2Ti2O7 to produce a strain-free, buried, disordered defect-fluorit
e layer approximately 12 mn thick within an ordered pyrochlore matrix. This
approach provides a new means of creating nanoscale, mixed ionic-electroni
c conductors in pyrochlore ceramics, such as those required for solid-state
electrochemical cells.